Carbon Nanotube Based VLSI Interconnects by Brajesh Kumar Kaushik & Manoj Kumar Majumder

Author:Brajesh Kumar Kaushik & Manoj Kumar Majumder
Language: eng
Format: epub
Publisher: Springer India, New Delhi

Fig. 3.2 a Equivalent circuit for a metallic SWNT bundle interconnects, where N a and N b represent number of SWNTs in ground and upper level, respectively. b Simplified equivalent circuit of Fig. 3.2a for SWNT bundle interconnects

3.2.2 Electron Transport Theory Based Model

Several researchers reported different physical models of SWNT and MWNT interconnects based on the unique transport property of electrons. Ngo et al. (2004) reported the mechanism of electron transport across metal CNT interface. The authors analyzed this mechanism for two different MWNT architectures, horizontal or side-contacted MWNTs and vertical or end-contacted MWNTs. Based on the physics of electron transport phenomenon, Naeemi and Meindl (2007a, b) presented an equivalent circuit model that captured changes in the number of conducting channels as a function of temperature. The model also takes into account various electron–phonon scattering mechanisms including emission and absorption of optical phonons and interaction with acoustic phonons. Recently, Li et al. (2009a) presented the current state of research in carbon based nanomaterials, particularly for one-dimensional (1D) form of CNTs and GNRs. A large number of attractive features such as electrical, thermal, mechanical properties and modeling techniques for CNTs were reviewed in this study (Li et al. 2009a). Again, on the basis of the electron transport properties, a novel transmission line (TL) model was presented for metallic and bundled SWNTs by Sarto et al. (2009), Sarto and Tamburrano (2010). Using closed form equations, the authors demonstrated per unit length charge deviation and current wave propagation equations in SWNT for the first time.

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